PART |
Description |
Maker |
MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
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MTP12N06EZL MTP12N06EZL_D ON2543 MTP12N06 MTP12N06 |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.180 OHM
|
ON Semiconductor MOTOROLA[Motorola, Inc] http://
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AD381SH AD381SH_883B AD381 AD382 AD380SH_883B AD38 |
(AD380 / AD382) High Speed / Low Drift FET Operational Amplifier 8-Channel 14-Bit Single-Supply Voltage-Output DAC; Package: LFCSP (9x9mm, 7.10 exposed pad); No of Pins: 64; Temperature Range: Industrial High Speed, Low Drift FET Operational Amplifier OP-AMP, 1000 uV OFFSET-MAX, BCY12
|
AD[Analog Devices] Analog Devices, Inc.
|
2SK2132 2SK2132-T |
High-voltage power MOS FET 180V/4A SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
2N4416A |
SMALL SIGNAL N-CHANNEL J-FET THAT IS DESIGNED TO PROVIDE HIGH PERFORMANCE AMPLIFICATION AT HIGH FREQUENCIES
|
Seme LAB
|
FLL21E010MK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
FLL21E040IK |
High Voltage - High Power GaAs FET 高电高功率GaAs场效应管
|
Sumitomo Electric Industries, Ltd.
|
2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00 |
From old datasheet system P-CHANNEL MOS FET FOR HIGH SWITCHING P-channel MOS FET (-30V, -2A)
|
NEC[NEC]
|
FLL310IQ-3A |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
FLL21E180IU |
High Voltage - High Power GaAs FET
|
Eudyna Devices Inc
|
FC21 |
TR: NPN Epitaxial Planar Silicon Transistor FET: N-Channel Silicon Junction FET High-Frequency Amplifier, AM tuner RF Amplifier Applications High-Frequency Amplifier/ AM tuner RF Amplifier Applications
|
Sanyo Semicon Device Sanyo Electric Co.,Ltd.
|